High power gallium nitride field-effect transistor (GaN FET) is a new type of high-performance semiconductor device with advantages such as high power
High power: Gallium nitride materials have high electron mobility and breakdown voltage,
Radar system: The application of GaN FET in radar systems is becoming increasingly widespread.
American scientists have used independently designed and precise atomic layer by layer arrangement technology to construct an ultra-thin superconducting field-effect transistor,
As the foundation of all modern electronic devices
the newly developed superconducting field-effect transistor, the critical temperature of the high-temperature superconducting compound model (lanthanum strontium copper oxygen) can reach around 30 Kelvin
