High power: Gallium nitride materials have high electron mobility and breakdown voltage,
Radar system: The application of GaN FET in radar systems is becoming increasingly widespread.
American scientists have used independently designed and precise atomic layer by layer arrangement technology to construct an ultra-thin superconducting field-effect transistor,
As the foundation of all modern electronic devices
the newly developed superconducting field-effect transistor, the critical temperature of the high-temperature superconducting compound model (lanthanum strontium copper oxygen) can reach around 30 Kelvin
EPC, a power conversion company, announced the launch of EPC2014,
